DDR Pulsed IMPATT Sources at MM-Wave Window Frequency: High-Power Operation Mode

The high-power generation capability of pulsed mode Silicon Double Drift Region (DDR) IMPATT devices has been studied by using generalized simulation software developed by the authors. The software is based on drift-diffusion modeling scheme, incorporating thermal design. After optimization of the device design, it is observed that a maximum efficiency of 9% with an output power of 15W can be achieved from pulsed DDR IMPATT based on Si. It is also observed that the best power output and efficiency occur at higher frequencies in the pulsed mode than in the CW mode. Simulated results are compared with experimentally reported results and quantitative agreement is demonstrated between theory and experiment. Transient thermal resistance of the diodes under pulsed mode operation has also been estimated by using computer simulation technique. Junction temperature of the pulsed diodes has been evaluated under actual operating condition. These results are useful for experimental realization of pulsed high power IMPATTs suitable for guided missiles and seekers.